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| HiPerFASTTM IGBT ISOPLUS247TM IXGR 24N60C (Electrically Isolated Back Surface) VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 600 600 20 30 42 22 80 ICM = 48 @ 0.8 VCES 80 -40 ... +150 150 -40 ... +150 300 2500 5 V V V V A A A A W C C C C V g ISOPLUS 247 E153432 G C E Isolated Backside* G = Gate, E = Emitter C = Collector * Patent pending Features l l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight 50/60 Hz, RMS, t = 1minute leads-to-tab DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 150C 5.0 200 1 100 2.1 2.5 V V A mA nA V Advantages l l l l l l l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IT, VGE = 15 V (see note 1) Easy assembly High power density Very fast switching speeds for high frequency applications (c) 2002 IXYS All rights reserved 98706 (02/02) IXGR 24N60C Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 17 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 120 40 55 IC = IT, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IT, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IT, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 13 17 15 25 75 60 0.24 15 12 0.15 130 110 0.6 140 110 0.36 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 1.57 K/W 0.15 K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 ISOPLUS 247 OUTLINE gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IT; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % Note: 1. IT = 24A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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